| 1 |
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Lee DJ, Lim JW, Mun JK, Yun SJ
Materials Research Bulletin, 83, 597, 2016 |
| 2 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun JK, Oh JH, Sung HK, Wang C
Solid-State Electronics, 114, 121, 2015 |
| 3 |
Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel
Im KS, Son DH, Ahn HK, Bae SB, Mun JK, Nam ES, Cristoloveanu S, Lee JH
Solid-State Electronics, 89, 124, 2013 |
| 4 |
Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment
Lim JW, Ahn HK, Kim SI, Kang DM, Lee JM, Min BG, Lee SH, Yoon HS, Ju CW, Kim H, Mun JK, Nam ES, Park HM
Thin Solid Films, 547, 106, 2013 |
| 5 |
Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistors
Han SY, Choi KJ, Lee JL, Mun JK, Park M, Kim H
Journal of Vacuum Science & Technology B, 21(5), 2133, 2003 |
| 6 |
Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor
Choi KJ, Lee JL, Mun JK, Kim H
Journal of Vacuum Science & Technology B, 20(1), 274, 2002 |
| 7 |
A Study of the Effects of Various Inhibitors in C/C Composites
Mun JK, Park CO, Yoon BI, Kim KS, Joo HJ
Journal of Materials Science, 30(6), 1529, 1995 |
