검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
N-2-Based Thermal Passivation of Porous Silicon to Achieve Long-Term Optical Stability (vol 13, pg H428, 2010) James TD, Lai MF, Parish G, Musca CA, Keating AJ Electrochemical and Solid State Letters, 14(3), S1, 2011 |
| 2 |
N-2-Based Thermal Passivation of Porous Silicon to Achieve Long-Term Optical Stability James TD, Parish G, Musca CA, Keating AJ Electrochemical and Solid State Letters, 13(12), H428, 2010 |
| 3 |
Pulsed Anodization for Control of Porosity Gradients and Interface Roughness in Porous Silicon James TD, Keating AJ, Parish G, Musca CA Journal of the Electrochemical Society, 156(9), H744, 2009 |
| 4 |
A technique for fabricating uniform double-sided porous silicon wafers James TD, Keating AJ, Parish G, Faraone L, Musca CA Electrochemical and Solid State Letters, 10(11), D130, 2007 |
| 5 |
Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors Wehner JGA, Musca CA, Sewell RH, Dell JM, Faraone L Solid-State Electronics, 50(9-10), 1640, 2006 |
| 6 |
On the bonding microstructure of amorphous silicon oxide thin films Soh MTK, Savvides N, Martin PJ, Musca CA Thin Solid Films, 515(4), 2284, 2006 |
| 7 |
A detailed theoretical and experimental noise study in n-on-p Hg0.68Cd0.32Te photodiodes Jozwikowski K, Musca CA, Faraone L, Jozwikowska A Solid-State Electronics, 48(1), 13, 2004 |
| 8 |
Low temperature saturation of p-n junction laser beam induced current signals Redfern DA, Fang W, Ito K, Musca CA, Dell JM, Faraone L Solid-State Electronics, 48(3), 409, 2004 |
| 9 |
Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion Rais MH, Musca CA, Antoszewski J, Dell JM, Nener BD, Faraone L Journal of Crystal Growth, 214, 1106, 2000 |
| 10 |
Reactive ion etching for mesa structuring in HgCdTe Smith EPG, Musca CA, Redfern DA, Dell JM, Faraone L Journal of Vacuum Science & Technology A, 17(5), 2503, 1999 |