1 |
Core-shell Fe2N@amorphous carbon nanocomposite-filled 3D graphene framework: An additive-free anode material for lithium-ion batteries Ding RR, Zhang JZ, Zhang J, Li ZH, Wang CY, Chen MM Chemical Engineering Journal, 360, 1063, 2019 |
2 |
Enhancing the heat and load transfer efficiency by optimizing the interface of hexagonal boron nitride/elastomer nanocomposites for thermal management applications Zhang Y, Choi JR, Park SJ Polymer, 143, 1, 2018 |
3 |
Characteristic STATE of substrate and coatings interface formed by Impulse Plasma Deposition method Chodun R, Nowakowska-Langier K, Zdunek K, Konarski P, Okrasa S Thin Solid Films, 663, 25, 2018 |
4 |
Microwave conductance and electrochemical characterization of Si/a-SiNx:H heterojunctions in contact to aqueous electrolyte Moreno EM, Friedrich D, Klein D, Kunst M Electrochimica Acta, 98, 157, 2013 |
5 |
Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering Zhang JX, Chen YZ, Cheng H, Uddin A, Yuan S, Pita K, Andersson TG Thin Solid Films, 471(1-2), 336, 2005 |
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Joining of silicon nitride by interposing metal foils: Effects of temperature and bonding pressure Osendi MI, Miranzo P Materials Science Forum, 426-4, 4075, 2003 |
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Interaction between an amorphous SiNx layer made by an ion-beam technique and a cerium overlayer Ji MR, Wu JX, Ma MS, Yang HW, Zhu JS Applied Surface Science, 174(1), 7, 2001 |
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Optimization of Ultrathin Gate Oxide in a Silo/Rtn Isolation Process for Advanced ULSI - Introducing a New Concept of Surface Gettering Deleonibus S, Martin F, Blanchard B, Ermolieff A, Papon AM Journal of the Electrochemical Society, 141(10), 2811, 1994 |
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Plasma-Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field-Effect Transistors on Semiinsulating InP Tabory CN, Young PG, Smith ED, Alterovitz SA Journal of Vacuum Science & Technology B, 12(1), 130, 1994 |
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In-Situ Spectroscopic Ellipsometry Studies of Interfaces of Thin-Films Deposited by PECVD Drevillon B Thin Solid Films, 241(1-2), 234, 1994 |