검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Study on the influence of gamma-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET Hao MR, Hu HY, Wang B, Liao CG, Kang HY, Su H Solid-State Electronics, 133, 45, 2017 |
| 2 |
Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout Hsu HW, Lee CC Solid-State Electronics, 138, 113, 2017 |
| 3 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S Solid-State Electronics, 113, 127, 2015 |
| 4 |
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Rodriguez N, Tienda-Luna IM, Martinez-Carricondo F, Biel B Solid-State Electronics, 65-66, 88, 2011 |
| 5 |
Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current Ferrier M, Clerc R, Ghibaudo G, Boeuf F, Skotnicki T Solid-State Electronics, 50(1), 69, 2006 |
| 6 |
Modelling of strained-Si/SiGe NMOS transistors including DC self-heating Jankovic ND, Pesic TV, O'Neill A Solid-State Electronics, 50(3), 496, 2006 |