검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs Agopian PGD, Martino JA, Simoen E, Claeys C Solid-State Electronics, 52(11), 1751, 2008 |
| 2 |
A new method to characterize dopant profiles in NMOSFETs using conventional transmission electron microscopy Kawamura K, Ikeda K, Terauchi M Applied Surface Science, 237(1-4), 621, 2004 |
| 3 |
Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors Sun J, Bartholomew RF, Bellur K, Srivastava A, Osburn CM, Masnari NA, Westhoff R Journal of the Electrochemical Society, 145(6), 2131, 1998 |