검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs Vardhan PH, Ganguly S, Ganguly U Solid-State Electronics, 152, 65, 2019 |
| 2 |
Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability Ko K, Son D, Kang M, Shin H Solid-State Electronics, 140, 74, 2018 |
| 3 |
Analytical modeling of metal gate granularity based threshold voltage variability in NWFET Vardhan PH, Mittal S, Ganguly S, Ganguly U Solid-State Electronics, 147, 26, 2018 |