검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors Lin YF, Xu Y, Lin CY, Suen YW, Yamamoto M, Nakaharai S, Ueno K, Tsukagoshi K Advanced Materials, 27(42), 6612, 2015 |
| 2 |
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits Lin YF, Xu Y, Wang ST, Li SL, Yamamoto M, Aparecido-Ferreira A, Li WW, Sun HB, Nakaharai S, Jian WB, Ueno K, Tsukagoshi K Advanced Materials, 26(20), 3263, 2014 |
| 3 |
Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth Moriyama Y, Hirashita N, Usuda K, Nakaharai S, Sugiyama N, Toyoda E, Takagi S Applied Surface Science, 256(3), 823, 2009 |
| 4 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |
| 5 |
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process Hirashita N, Nakaharai S, Moriyama Y, Usuda K, Tezuka T, Sugiyama N, Takagi SI Thin Solid Films, 517(1), 407, 2008 |
| 6 |
Device structures and carrier transport properties of advanced CMOS using high mobility channels Takagi S, Tezuka T, Irisawa T, Nakaharai S, Numata T, Usuda K, Sugiyama N, Shichijo M, Nakane R, Sugahara S Solid-State Electronics, 51(4), 526, 2007 |
| 7 |
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Tezuka T, Moriyama Y, Nakaharai S, Sugiyama N, Hirashita N, Toyoda E, Miyamura Y, Takagi S Thin Solid Films, 508(1-2), 251, 2006 |
| 8 |
Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain Maeda T, Ikeda K, Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y, Takagi S Thin Solid Films, 508(1-2), 346, 2006 |
| 9 |
Sub-band structure engineering for advanced CMOS channels Takagi S, Mizuno T, Tezuka T, Sugiyama N, Nakaharai S, Numata T, Koga J, Uchida K Solid-State Electronics, 49(5), 684, 2005 |
| 10 |
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation Usuda K, Mizuno T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S, Takagi S Applied Surface Science, 224(1-4), 113, 2004 |