검색결과 : 1건
No. | Article |
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1 |
Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects Bormontov EN, Levin MN, Nakhmanson RS Solid-State Electronics, 44(8), 1441, 2000 |
No. | Article |
---|---|
1 |
Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects Bormontov EN, Levin MN, Nakhmanson RS Solid-State Electronics, 44(8), 1441, 2000 |