| 1 |
Efficiency enhancement of a-Si and CZTS solar cells using different thermoelectric hybridization strategies
Contento G, Lorenzi B, Rizzo A, Narducci D
Energy, 131, 230, 2017 |
| 2 |
Phonon scattering enhancement in silicon nanolayers
Narducci D, Cerofolini G, Ferri M, Suriano F, Mancarella F, Belsito L, Solmi S, Roncaglia A
Journal of Materials Science, 48(7), 2779, 2013 |
| 3 |
Assigning chemical configurations to the XPS features observed at pristine (100) Si surface resulting after etching in HF aqueous solution
Cerofolini GF, Romano E, Narducci D, Belanzoni P, Giorgi G
Applied Surface Science, 256(21), 6330, 2010 |
| 4 |
Sputter-induced trap states at oxidized and grafted silicon surfaces: A comparative study
Narducci D, Di Vita E
Thin Solid Films, 517(6), 1944, 2009 |
| 5 |
Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching
Cerofolini GF, Giussani A, Modelli A, Mascolo D, Ruggiero D, Narducci D, Romano E
Applied Surface Science, 254(18), 5781, 2008 |
| 6 |
Investigation of gas-surface interactions at self-assembled silicon surfaces acting as gas sensors
Narducci D, Bernardinello P, Oldani M
Applied Surface Science, 212, 491, 2003 |
| 7 |
Morphology changes of Si(001) surfaces during wet chemical halogenation
Pedemonte L, Bracco G, Relini A, Rolandi R, Narducci D
Applied Surface Science, 212, 595, 2003 |
| 8 |
On the re-oxidation of silicon(001) surfaces modified by self-assembled monolayers
Narducci D, Pedemonte L, Bracco G
Applied Surface Science, 212, 649, 2003 |
| 9 |
Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer
Bollani M, Piagge R, Charai A, Narducci D
Applied Surface Science, 175, 379, 2001 |
| 10 |
Geometrical reconstructions and electronic relaxations of silicon surfaces. I. An electron density topological study of H-covered and clean Si(111)(1x1) surfaces
Cargnoni F, Gatti C, May E, Narducci D
Journal of Chemical Physics, 112(2), 887, 2000 |
