| 1 |
Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017
Nassiopoulou AG
Solid-State Electronics, 143, 1, 2018 |
| 2 |
Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics
Hourdakis E, Casanova A, Larrieu G, Nassiopoulou AG
Solid-State Electronics, 143, 77, 2018 |
| 3 |
Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density metal-insulator-metal capacitor
Hourdakis E, Nassiopoulou AG
Thin Solid Films, 621, 36, 2017 |
| 4 |
Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si
Sarafis P, Hourdakis E, Nassiopoulou AG, Neve CR, Ben Ali K, Raskin JP
Solid-State Electronics, 87, 27, 2013 |
| 5 |
Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range
Agocs E, Nassiopoulou AG, Milita S, Petrik P
Thin Solid Films, 541, 83, 2013 |
| 6 |
Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon
Agocs E, Petrik P, Milita S, Vanzetti L, Gardelis S, Nassiopoulou AG, Pucker G, Balboni R, Fried M
Thin Solid Films, 519(9), 3002, 2011 |
| 7 |
RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements
Contopanagos H, Zacharatos F, Nassiopoulou AG
Solid-State Electronics, 52(11), 1730, 2008 |
| 8 |
Few nanometer thick anodic porous alumina films on silicon with high density of vertical pores
Kokonou M, Giannakopoulos KP, Nassiopoulou AG
Thin Solid Films, 515(7-8), 3602, 2007 |
| 9 |
Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes
Contopanagos H, Nassiopoulou AG
Solid-State Electronics, 50(7-8), 1283, 2006 |
| 10 |
Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensors
Pagonis DN, Nassiopoulou AG, Kaltsas G
Journal of the Electrochemical Society, 151(8), H174, 2004 |
