검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography Bengoechea-Encabo A, Albert S, Sanchez-Garcia MA, Lopez LL, Estrade S, Rebled JM, Peiro F, Nataf G, de Merry P, Zuniga-Perez J, Calleja E Journal of Crystal Growth, 353(1), 1, 2012 |
| 2 |
Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots Das A, Sinha P, Kotsar Y, Kandaswamy PK, Dimitrakopulos GP, Kehagias T, Komninou P, Nataf G, De Mierry P, Monroy E Journal of Crystal Growth, 323(1), 161, 2011 |
| 3 |
Stacking faults blocking process in (11-22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy Kriouche N, Vennegues P, Nemoz M, Nataf G, De Mierry P Journal of Crystal Growth, 312(19), 2625, 2010 |
| 4 |
Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns Bougrioua Z, Gibarta P, Calleja E, Jahn U, Trampert A, Ristic J, Utrera M, Nataf G Journal of Crystal Growth, 309(2), 113, 2007 |
| 5 |
Growth of GaN on (111) Si: a route towards self-supported GaN Lahreche H, Nataf G, Feltin E, Beaumont B, Gibart P Journal of Crystal Growth, 231(3), 329, 2001 |