화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Interface control and band offset at the Ga0.52In0.48P an GaAs heterojunction
Cai C, Nathan MI
Journal of Vacuum Science & Technology B, 18(4), 2096, 2000
2 GaN quantum dots on sapphire and Si substrates
Morkoc H, Reshchikov MA, Baski A, Nathan MI
Materials Science Forum, 338-3, 1453, 2000
3 The Blue Laser-Diode - GaN Based Light Emitters and Lasers, by S. Nakamura, G. Fasol
Nathan MI
Science, 277(5322), 46, 1997
4 Growth of (111)B-Oriented Resonant-Tunneling Devices in a Gas-Source Molecular-Beam Epitaxy System
Cong L, Albrecht JD, Cohen D, Ruden PP, Nathan MI
Journal of Vacuum Science & Technology A, 14(3), 924, 1996
5 Modification of Al/GaAs(001) Schottky Barriers by Means of Heterovalent Interface Layers
Cantile M, Sorba L, Faraci P, Yildirim S, Biasiol G, Bratina G, Franciosi A, Miller TJ, Nathan MI, Tapfer L
Journal of Vacuum Science & Technology B, 12(4), 2653, 1994