검색결과 : 10건
No. | Article |
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1 |
Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots Parry HJ, Ashwin MJ, Neave JH, Jones TS Journal of Crystal Growth, 278(1-4), 131, 2005 |
2 |
A comparison between GaAs and AlAs deposition on patterned substrates Williams RS, Ashwin MJ, Jones TS, Neave JH Journal of Crystal Growth, 278(1-4), 458, 2005 |
3 |
SiGe quantum cascade structures for light emitting devices Zhang J, Li XB, Neave JH, Norris DJ, Cullis AG, Kelsall RW, Lynch S, Towsend P, Paul DJ, Fewster PF Journal of Crystal Growth, 278(1-4), 488, 2005 |
4 |
GSMBE growth and structural characterisation of SiGeC layers for HBT Zhang J, Neave JH, Li XB, Fewster PF, El Mubarek HAW, Ashburn P, Mitrovic IZ, Buiu O, Hall S Journal of Crystal Growth, 278(1-4), 505, 2005 |
5 |
Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures Joyce PB, Krzyzewski TJ, Steans PH, Bell GR, Neave JH, Jones TS Journal of Crystal Growth, 244(1), 39, 2002 |
6 |
Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates Williams RS, Ashwin MJ, Neave JH, Jones TS Journal of Crystal Growth, 227, 56, 2001 |
7 |
Morphological-Study of GaAs Grown by Periodic Supply Epitaxy on (111)B Substrates Allegretti FE, Roberts C, Neave JH Journal of Vacuum Science & Technology A, 15(3), 954, 1997 |
8 |
MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates Fahy MR, Zhang XM, Tok ES, Neave JH, Vaccaro P, Fujita K, Takahashi M, Watanabe T, Sato K, Joyce BA Thin Solid Films, 306(2), 192, 1997 |
9 |
Different Growth Modes in GaAs(110) Homoepitaxy Holmes DM, Belk JG, Sudijono JL, Neave JH, Jones TS, Joyce BA Journal of Vacuum Science & Technology A, 14(3), 849, 1996 |
10 |
Study of the Epitaxial-Growth of GaAs(110) Films by Molecular-Beam Epitaxy Fawcett PN, Neave JH, Zhang J, Joyce BA Journal of Vacuum Science & Technology A, 12(4), 1201, 1994 |