화학공학소재연구정보센터
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No. Article
1 Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots
Parry HJ, Ashwin MJ, Neave JH, Jones TS
Journal of Crystal Growth, 278(1-4), 131, 2005
2 A comparison between GaAs and AlAs deposition on patterned substrates
Williams RS, Ashwin MJ, Jones TS, Neave JH
Journal of Crystal Growth, 278(1-4), 458, 2005
3 SiGe quantum cascade structures for light emitting devices
Zhang J, Li XB, Neave JH, Norris DJ, Cullis AG, Kelsall RW, Lynch S, Towsend P, Paul DJ, Fewster PF
Journal of Crystal Growth, 278(1-4), 488, 2005
4 GSMBE growth and structural characterisation of SiGeC layers for HBT
Zhang J, Neave JH, Li XB, Fewster PF, El Mubarek HAW, Ashburn P, Mitrovic IZ, Buiu O, Hall S
Journal of Crystal Growth, 278(1-4), 505, 2005
5 Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures
Joyce PB, Krzyzewski TJ, Steans PH, Bell GR, Neave JH, Jones TS
Journal of Crystal Growth, 244(1), 39, 2002
6 Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates
Williams RS, Ashwin MJ, Neave JH, Jones TS
Journal of Crystal Growth, 227, 56, 2001
7 Morphological-Study of GaAs Grown by Periodic Supply Epitaxy on (111)B Substrates
Allegretti FE, Roberts C, Neave JH
Journal of Vacuum Science & Technology A, 15(3), 954, 1997
8 MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates
Fahy MR, Zhang XM, Tok ES, Neave JH, Vaccaro P, Fujita K, Takahashi M, Watanabe T, Sato K, Joyce BA
Thin Solid Films, 306(2), 192, 1997
9 Different Growth Modes in GaAs(110) Homoepitaxy
Holmes DM, Belk JG, Sudijono JL, Neave JH, Jones TS, Joyce BA
Journal of Vacuum Science & Technology A, 14(3), 849, 1996
10 Study of the Epitaxial-Growth of GaAs(110) Films by Molecular-Beam Epitaxy
Fawcett PN, Neave JH, Zhang J, Joyce BA
Journal of Vacuum Science & Technology A, 12(4), 1201, 1994