| 1 |
Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
Matsuo K, Negoro N, Kotani J, Hashizume T, Hasegawa H
Applied Surface Science, 244(1-4), 273, 2005 |
| 2 |
Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces
Negoro N, Anantathanasarn S, Hasegawa H
Journal of Vacuum Science & Technology B, 21(4), 1945, 2003 |
| 3 |
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4 x 4) surfaces
Negoro N, Kasai S, Hasegawa H
Applied Surface Science, 190(1-4), 269, 2002 |
| 4 |
Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors
Kasai S, Negoro N, Hasegawa H
Applied Surface Science, 175, 255, 2001 |
| 5 |
Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation
Negoro N, Fujikura H, Hasegawa H
Applied Surface Science, 159, 292, 2000 |
| 6 |
Effects of gap states an scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy
Hasegawa H, Negoro N, Kasai S, Ishikawa Y, Fujikuwa H
Journal of Vacuum Science & Technology B, 18(4), 2100, 2000 |
