화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 GaN/NbN epitaxial semiconductor/superconductor heterostructures
Yan RS, Khalsa G, Vishwanath S, An YH, Wright J, Ouvimov SR, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D
Nature, 555(7695), 183, 2018
2 Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ
Journal of Crystal Growth, 456, 121, 2016
3 Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ
Journal of Crystal Growth, 425, 119, 2015
4 Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy
Frajtag P, Nepal N, Paskova T, Bedair SM, El-Masry NA
Journal of Crystal Growth, 367, 88, 2013
5 Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films
Frajtag P, Samberg JP, El-Masry NA, Nepal N, Bedair SM
Journal of Crystal Growth, 322(1), 27, 2011
6 Sublimation growth of aluminum nitride crystals
Gu Z, Du L, Edgar JH, Nepal N, Lin JY, Jiang H, Witt R
Journal of Crystal Growth, 297(1), 105, 2006