검색결과 : 6건
No. | Article |
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1 |
GaN/NbN epitaxial semiconductor/superconductor heterostructures Yan RS, Khalsa G, Vishwanath S, An YH, Wright J, Ouvimov SR, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D Nature, 555(7695), 183, 2018 |
2 |
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ Journal of Crystal Growth, 456, 121, 2016 |
3 |
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ Journal of Crystal Growth, 425, 119, 2015 |
4 |
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Frajtag P, Nepal N, Paskova T, Bedair SM, El-Masry NA Journal of Crystal Growth, 367, 88, 2013 |
5 |
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films Frajtag P, Samberg JP, El-Masry NA, Nepal N, Bedair SM Journal of Crystal Growth, 322(1), 27, 2011 |
6 |
Sublimation growth of aluminum nitride crystals Gu Z, Du L, Edgar JH, Nepal N, Lin JY, Jiang H, Witt R Journal of Crystal Growth, 297(1), 105, 2006 |