검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Catalytic Carbo- and Aminoboration of Alkenyl Carbonyl Compounds via Five- and Six-Membered Palladacycles Liu Z, Ni HQ, Zeng T, Engle KM Journal of the American Chemical Society, 140(9), 3223, 2018 |
| 2 |
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate Xiang W, Wang GW, Hao HY, Liao YP, Han X, Zhang LC, Xu YQ, Ren ZW, Ni HQ, He ZH, Niu ZC Journal of Crystal Growth, 443, 85, 2016 |
| 3 |
Self-Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics Yu Y, Dou XM, Wei B, Zha GW, Shang XJ, Wang L, Su D, Xu JX, Wang HY, Ni HQ, Sun BQ, Ji Y, Han XD, Niu ZC Advanced Materials, 26(17), 2710, 2014 |
| 4 |
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping Yang XG, Wang KF, Gu YX, Ni HQ, Wang XD, Yang T, Wang ZG Solar Energy Materials and Solar Cells, 113, 144, 2013 |
| 5 |
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy Ni HQ, Niu ZC, Fang ZD, Huang SS, Zhang SY, Wu DH, Shun Z, Han Q, Wu RH Journal of Crystal Growth, 301, 125, 2007 |
| 6 |
Fabrication of ultra-low density and long-wavelength emission InAs quantum dots Huang SS, Niu ZC, Ni HQ, Xiong YH, Zhan F, Fang ZD, Xia JB Journal of Crystal Growth, 301, 751, 2007 |
| 7 |
Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy Zhao H, Xu YQ, Ni HQ, Zhang SY, Han Q, Du Y, Yang XH, Wu RH, Niu ZC Journal of Crystal Growth, 301, 979, 2007 |
| 8 |
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy Jiang DS, Qu YH, Ni HQ, Wu DH, Xu YQ, Niu ZC Journal of Crystal Growth, 288(1), 12, 2006 |
| 9 |
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content Wu DH, Niu ZC, Zhang SY, Ni HQ, He ZH, Sun Z, Han Q, Wu RH Journal of Crystal Growth, 290(2), 494, 2006 |
| 10 |
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells Niu ZC, Xu XH, Ni HQ, Xu YQ, He ZH, Han Q, Wu RH Journal of Crystal Growth, 278(1-4), 558, 2005 |