검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Irradiation-induced deep levels in silicon for power device tailoring Siemieniec R, Niedernostheide FJ, Schulze HJ, Sudkamp W, Kellner-Werdehausen U, Lutz J Journal of the Electrochemical Society, 153(2), G108, 2006 |
| 2 |
Analysis of radiation-induced defects and performance conditioning in high-power devices Niedernostheide FJ, Schmitt M, Schulze HJ, Kellner-Werdehausen U, Frohnmeyer A, Wachutka G Journal of the Electrochemical Society, 150(1), G15, 2003 |
| 3 |
Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements Schulze HJ, Frohnmeyer A, Niedernostheide FJ, Hille F, Tutto P, Pavelka T, Wachutka G Journal of the Electrochemical Society, 148(11), G655, 2001 |
| 4 |
Energy levels of defects in electroluminescent ZnS : Mn thin films exhibiting hysteresis and self-organized patterns Vlasenko NA, Denisova ZL, Veligura LI, Zuccaro S, Niedernostheide FJ, Purwins HG Journal of Crystal Growth, 214, 944, 2000 |
| 5 |
Analytical tools for the characterization of power devices Schulze HJ, Frohnmeyer A, Niedernostheide FJ, Simmnacher B, Kolbesen BO, Tutto P, Pavelka T, Wachutka G Journal of the Electrochemical Society, 147(10), 3879, 2000 |
| 6 |
Pattern formation in semiconductors Bel'kov VV, Hirschinger J, Novak V, Niedernostheide FJ, Ganichev SD, Prettl W Nature, 397(6718), 398, 1999 |