검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P Solid-State Electronics, 46(3), 343, 2002 |
| 2 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |