화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D
Solid-State Electronics, 50(1), 44, 2006
2 Complementary tunneling transistor for low power application
Wang PF, Hilsenbeck K, Nirschl T, Oswald M, Stepper C, Weis M, Schmitt-Landsiedel D, Hansch W
Solid-State Electronics, 48(12), 2281, 2004
3 Simulation of the Esaki-tunneling FET
Wang PF, Nirschl T, Schmitt-Landsiedel D, Hansch W
Solid-State Electronics, 47(7), 1187, 2003