| 1 |
PbSnTe double-hetero junction laser diode and its application to mid-infrared spectroscopic imaging
Oyama Y, Tanabe T, Kato Y, Nishizawa JI, Sasaki T
Journal of Crystal Growth, 310(7-9), 1917, 2008 |
| 2 |
Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation
Oyama Y, Tanabe T, Sato F, Kenmochi A, Nishizawa JI, Sasaki T, Suto K
Journal of Crystal Growth, 310(7-9), 1923, 2008 |
| 3 |
Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy
Kochiya T, Oyama Y, Sugai M, Nishizawa JI
Thin Solid Films, 515(11), 4838, 2007 |
| 4 |
The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics
Ohno T, Oyama Y, Nishizawa JI
Applied Surface Science, 252(19), 7283, 2006 |
| 5 |
Anisotropy of lateral growth rate in liquid phase epitaxy of {001} InP
Kochiya T, Oyama Y, Suto K, Nishizawa JI
Applied Surface Science, 216(1-4), 78, 2003 |
| 6 |
Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
Oyama Y, Kochiya T, Suto K, Nishizawa JI
Journal of Crystal Growth, 258(1-2), 41, 2003 |
| 7 |
Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
Oyama Y, Tezuka K, Suto K, Nishizawa JI
Journal of Crystal Growth, 246(1-2), 15, 2002 |
| 8 |
Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP
Oyama Y, Suzuki T, Suto K, Nishizawa JI
Journal of Crystal Growth, 222(1-2), 64, 2001 |
| 9 |
Dislocation densities in InP single crystals grown under controlled phosphorus vapor pressure by the horizontal Bridgman method
Shimizu A, Nishizawa JI, Oyama Y, Suto K
Journal of Crystal Growth, 209(1), 21, 2000 |
