화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor
Nishizawa SI, Pons M
Materials Science Forum, 483, 53, 2005
2 Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals
Kato T, Kojima K, Nishizawa SI, Arai K
Materials Science Forum, 483, 315, 2005
3 High-quality SiC bulk single crystal growth based on simulation and experiment
Nishizawa SI, Kato T, Kitou Y, Oyanagi N, Hirose F, Yamaguchi H, Bahng W, Arai K
Materials Science Forum, 457-460, 29, 2004
4 Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth
Kato T, Nishizawa SI, Arai K
Journal of Crystal Growth, 233(1-2), 219, 2001
5 Transition of Oscillatory Floating Half Zone Convection from Earths Gravity to Microgravity
Yao YL, Shu JZ, Xie JC, Liu F, Hu WR, Hirata A, Nishizawa SI, Sakurai M
International Journal of Heat and Mass Transfer, 40(11), 2517, 1997
6 Marangoni Convection in a Liquid Bridge Under Microgravity Conditions During Parabolic Flight
Hirata A, Nishizawa SI, Noguchi M, Sakurai M, Yasuhiro S, Imaishi N
Journal of Chemical Engineering of Japan, 27(1), 65, 1994