검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics Hahn H, Achenbach J, Ketteniss N, Noculak A, Kalisch H, Vescan A Solid-State Electronics, 67(1), 90, 2012 |
| 2 |
MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates Fieger M, Eickelkamp M, Koshroo LR, Dikme Y, Noculak A, Kalisch H, Heuken M, Jansen RH, Vescan A Journal of Crystal Growth, 298, 843, 2007 |