| 1 |
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
Noh YK, Lee ST, Kim MD, Oh JE
Journal of Crystal Growth, 509, 141, 2019 |
| 2 |
Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy
Noh YK, Lee ST, Kim MD, Oh JE
Journal of Crystal Growth, 460, 37, 2017 |
| 3 |
Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux
Lee JH, Ryu H, Ahn SJ, Noh YK, Oh JE, Kim YH
Current Applied Physics, 15(3), 232, 2015 |
| 4 |
Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study
Kim YH, Lee JH, Noh YK, Oh JE, Ahn SJ
Thin Solid Films, 576, 61, 2015 |
| 5 |
제올라이트 3A, 4A, 5A, 13X 펠렛의 탈착 압력에 따른 이산화탄소 흡.탈착 파과특성
심중보, 노영경, 박영철, 김현욱, 류호정, 조철희, 문종호
Clean Technology, 20(2), 179, 2014 |
| 6 |
Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates
Noh YK, Park CH, Lee ST, Kim KJ, Kim MD, Oh JE
Current Applied Physics, 14, S29, 2014 |
| 7 |
Dual growth factor-loaded core-shell polymer microcapsules can promote osteogenesis and angiogenesis
Subbiah R, Du P, Hwang MP, Kim IG, Van SY, Noh YK, Park H, Park K
Macromolecular Research, 22(12), 1320, 2014 |
| 8 |
Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers
Noh YK, Kim MD, Oh JE, Yang WC, Kim YN
Journal of Crystal Growth, 323(1), 405, 2011 |
| 9 |
Substrate temperature dependence of the phase transition behavior of AIN layers grown on Si(111) substrate by metalorganic chemical vapor deposition
Kim YH, Kim CS, Noh YK, Kim MD, Oh JE
Journal of Crystal Growth, 334(1), 189, 2011 |
| 10 |
Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method
Kim YH, Noh YK, Kim MD, Oh JE, Chung KS
Thin Solid Films, 518(8), 2280, 2010 |
