검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G Journal of Crystal Growth, 507, 139, 2019 |
| 2 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C Solid-State Electronics, 129, 93, 2017 |
| 3 |
Optical metrology of thick photoresist process for advanced 3D applications Nolot E, Andre A, Scibetta C, Poulingue M, Levin L, Vignoud L, Issele H Thin Solid Films, 571, 609, 2014 |
| 4 |
200 mm Silicon On Porous Layer Substrates Made by the Smart Cut Technology for Double Layer-Transfer Applications Stragier AS, Signamarcheix T, Salvetat T, Nolot E, Dechamp J, Mercier D, Gergaud P, Tauzin A, Clavelier L, Lemiti M Journal of the Electrochemical Society, 158(5), H595, 2011 |
| 5 |
Fully depleted silicon on insulator MOSFETs on (110) surface for hybrid orientation technologies Signamarcheix T, Andrieu F, Biasse B, Casse M, Papon AM, Nolot E, Ghyselen B, Faynot O, Clavelier L Solid-State Electronics, 59(1), 8, 2011 |
| 6 |
Systematic combination of X-ray reflectometry and spectroscopic ellipsometry: A powerful technique for reliable in-fab metrology Nolot E, Andre A Thin Solid Films, 519(9), 2782, 2011 |