검색결과 : 8건
No. | Article |
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1 |
Photovoltaic and thermoelectric indirect coupling for maximum solar energy exploitation Hajji M, Labrim H, Benaissa M, Laazizi A, Ez-Zahraouy H, Ntsoenzok E, Meot J, Benyoussef A Energy Conversion and Management, 136, 184, 2017 |
2 |
Optical properties of rare earth-doped TiO2 anatase and rutile thin films grown by pulsed-laser deposition Le Boulbar E, Millon E, Boulmer-Leborgne C, Cachoncinlle C, Hakim B, Ntsoenzok E Thin Solid Films, 553, 13, 2014 |
3 |
Effect of Si and He implantation in the formation of ultra shallow junctions in Si Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B Thin Solid Films, 518(9), 2354, 2010 |
4 |
Optical and nuclear characterization of Xe-induced nanoporosity in SiO2 Naas A, De Sousa-Meneses D, Hakim B, Regula G, Beaufort MF, Belaidi A, Ntsoenzok E Thin Solid Films, 518(16), 4721, 2010 |
5 |
Nanocavity generation in SiO2 by Kr and Xe ion implantation Assaf H, Ntsoenzok E, Leoni E, Barthe MF, Ruault MO, Kaitasov O, Ashok S Electrochemical and Solid State Letters, 10(10), G72, 2007 |
6 |
Modifications of He implantation induced cavities in silicon by MeV silicon implantation Desgardin P, Barthe MF, Ntsoenzok E, Liu CL Applied Surface Science, 252(9), 3231, 2006 |
7 |
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment Liu CL, Ntsoenzok E, Vengurlekar A, Ashok S, Alquier D, Ruault MO, Dubois C Journal of Vacuum Science & Technology B, 23(3), 990, 2005 |
8 |
Contribution of X-Ray Diffraction simulations to experimental study of high energy He implantation at high dose in 4H-SiC at room temperature Declemy A, Shiryaev A, Stepanov S, Barbot JF, Beaufort MF, Oliviero E, Ntsoenzok E, Sauvage T Materials Science Forum, 457-460, 937, 2004 |