화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 MBE growth mode and C incorporation of GeC epilayers on Si(001) substrates using an arc plasma gun as a novel C source
Okinaka M, Hamana Y, Tokuda T, Ohta J, Nunoshita M
Journal of Crystal Growth, 249(1-2), 78, 2003
2 Large band gap bowing of MBE-grown GeC/Si(001) layers
Okinaka M, Miyatake K, Ohta J, Nunoshita M
Journal of Crystal Growth, 255(3-4), 273, 2003
3 Effect of Ar+ ion irradiation on substitutional C incorporation into MBE-grown GeC/Si(001)
Okinaka M, Miyatake K, Ohta J, Nunoshita M
Journal of Crystal Growth, 258(3-4), 251, 2003