검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Oxidation of GaN(0001) by low-energy ion bombardment Grodzicki M, Mazur P, Zuber S, Brona J, Ciszewski A Applied Surface Science, 304, 20, 2014 |
| 2 |
Sputter yields in diamond bombarded by ultra low energy ions de la Mata BG, Dowsett MG, Twitchen D Applied Surface Science, 252(19), 6444, 2006 |
| 3 |
Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O-2(+) Huyghebaert C, Conard T, Vandervorst W Applied Surface Science, 231-2, 693, 2004 |
| 4 |
Apparent and real transient effects in SIMS depth profiling using oxygen bombardment Wittmaack K Applied Surface Science, 203, 20, 2003 |
| 5 |
Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O-2(+) ion-fluence in SiGe Huyghebaert C, Brijs B, Janssens T, Vandervorst W Applied Surface Science, 203, 56, 2003 |
| 6 |
Ionization probability changes of the Si+ ions during the transient for 3 keV O-2(+) bombardment of Si Huyghebaert C, Janssens T, Brijs B, Vandervorst W Applied Surface Science, 203, 134, 2003 |
| 7 |
Simulation of SiO2 build-up in silicon under oxygen bombardment Guzman B, Serrano JJ, Blanco JM, Aguilar M, Arneziane O Applied Surface Science, 203, 139, 2003 |
| 8 |
An (un)solvable problem in SIMS: B-interfacial profiling Vandervorst W, Janssens T, Loo R, Caymax M, Peytier I, Lindsay R, Fruhauf J, Bergmaier A, Dollinger G Applied Surface Science, 203, 371, 2003 |
| 9 |
In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy Wittmaack K, Griesche J, Osten HJ, Patel SB Journal of Vacuum Science & Technology B, 18(1), 524, 2000 |
| 10 |
Oxidation-Enhanced Roughening of Thin Co Films During Sputtering by O-2(+) Ions Mohadjeri B, Petravic M, Svensson BG Journal of Vacuum Science & Technology A, 14(4), 2192, 1996 |