검색결과 : 42건
| No. | Article |
|---|---|
| 1 |
Absorption coefficients of GeSn extracted from PIN photodetector response Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Korner R, Kasper E, Schulze J Solid-State Electronics, 110, 71, 2015 |
| 2 |
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn Oehme M, Kostecki K, Schmid M, Oliveira F, Kasper E, Schulze J Thin Solid Films, 557, 169, 2014 |
| 3 |
Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes Schmid M, Oehme M, Gollhofer M, Korner R, Kaschel M, Kasper E, Schulze J Thin Solid Films, 557, 351, 2014 |
| 4 |
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J Journal of Crystal Growth, 384, 71, 2013 |
| 5 |
Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J Solid-State Electronics, 83, 87, 2013 |
| 6 |
Charge carrier traffic at self-assembled Ge quantum dots on Si Kaniewska M, Engstrom O, Karmous A, Oehme M, Petersson G, Kasper E Solid-State Electronics, 83, 99, 2013 |
| 7 |
Growth of silicon based germanium tin alloys Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J Thin Solid Films, 520(8), 3195, 2012 |
| 8 |
Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices Schulze J, Oehme M, Werner J Thin Solid Films, 520(8), 3259, 2012 |
| 9 |
Laser assisted formation of binary and ternary Ge/Si/Sn alloys Stefanov S, Conde JC, Benedetti A, Serra C, Werner J, Oehme M, Schulze J, Chiussi S Thin Solid Films, 520(8), 3262, 2012 |
| 10 |
Silicon interband tunneling diodes with high peak-to-valley ratios Oehme M Thin Solid Films, 520(8), 3341, 2012 |