화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids
Yoshida Y, Oga R, Lee WS, Fujiwara Y, Takeda Y
Thin Solid Films, 464-65, 240, 2004
2 Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y
Applied Surface Science, 216(1-4), 564, 2003
3 Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy
Oga R, Yamamoto S, Ohzawa I, Fujiwara Y, Takeda Y
Journal of Crystal Growth, 237, 239, 2002
4 Cathodoluminescence study of selective epitaxial growth of InxGa1-xAs (x-0.53) thin quantum wells on InP pyramid structures on a masked substrate
Yamakawa I, Oga R, Nonogaki Y, Fujiwara Y, Takeda Y, Nakamura A
Journal of Crystal Growth, 241(1-2), 85, 2002