| 1 |
Formation of alumina film using alloy catalyzers in catalytic chemical vapor deposition
Ogita YI, Saito N
Thin Solid Films, 575, 47, 2015 |
| 2 |
Low surface recombination velocity in n-Si passivated by catalytic-chemical vapor deposited alumina films
Ogita YI, Aizawa Y
Thin Solid Films, 575, 52, 2015 |
| 3 |
Reduction of surface recombination velocity by rapid thermal annealing of p-Si passivated by catalytic-chemical vapor deposited alumina films
Ogita YI, Tachihara M
Thin Solid Films, 575, 56, 2015 |
| 4 |
Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films
Ogita YI, Tachihara M, Aizawa Y, Saito N
Thin Solid Films, 519(14), 4469, 2011 |
| 5 |
Low temperature decomposition of large molecules of TMA using catalyzers with resistance to oxidation in catalytic CVD
Ogita YI, Kudoh T, Iwai R
Thin Solid Films, 517(12), 3439, 2009 |
| 6 |
Resistance characteristics to oxidation of the metal-catalyzer for Cat-CVD
Kudoh T, Ogita YI
Thin Solid Films, 517(12), 3443, 2009 |
| 7 |
Electrical properties of alumina films grown on Si at low temperature using catalytic CVD
Ogita YI, Ohsone S, Kudoh T, Sakamoto F
Thin Solid Films, 516(5), 836, 2008 |
| 8 |
The mechanism of alumina formation from TMA and molecular oxygen using catalytic-CVD with an iridium catalyzer
Ogita YI, Tomita T
Thin Solid Films, 501(1-2), 35, 2006 |
| 9 |
The mechanism of alumina formation from TMA and molecular oxygen using Catalytic-CVD with a tungsten catalyzer
Ogita YI, Tomita T
Thin Solid Films, 501(1-2), 39, 2006 |
| 10 |
Al2O3 formation on Si by catalytic chemical vapor deposition
Ogita YI, Iehara S, Tomita T
Thin Solid Films, 430(1-2), 161, 2003 |
