검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
In situ synthesis of TiH2 layer on metallic titanium foil through gaseous hydrogen free acid-hydrothermal method Ren N, Wang GC, Liu H, Ohachi T Materials Research Bulletin, 50, 379, 2014 |
| 2 |
Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si Ohachi T, Yamabe N, Yamamoto Y, Wada M, Ariyada O Journal of Crystal Growth, 318(1), 468, 2011 |
| 3 |
Interface roughness of double buffer layer of GaN film grown on Si(1 1 1) substrate using GIXR analysis Yamamoto Y, Yamabe N, Ohachi T Journal of Crystal Growth, 318(1), 474, 2011 |
| 4 |
Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates Ohachi T, Yamabe N, Shimomura H, Shimamura T, Ariyada O, Wada M Journal of Crystal Growth, 311(10), 2987, 2009 |
| 5 |
Nitridation of Si(111) for growth of 2H-AlN(0001)/beta-Si3N4/Si(111) structure Yamabe N, Shimomura H, Shimamura T, Ohachi T Journal of Crystal Growth, 311(10), 3049, 2009 |
| 6 |
Electronic structure and diffusion paths of Ag ions in rocksalt structured AgI Ono S, Kobayashi M, Kashida S, Ohachi T Solid State Ionics, 178(15-18), 1023, 2007 |
| 7 |
Role of excited nitrogen species in the growth of GaN by RF-MBE Kikuchi T, Somintac AS, Ariyada O, Wada M, Ohachi T Journal of Crystal Growth, 292(2), 221, 2006 |
| 8 |
Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(001) Kangawa Y, Ito T, Taguchi A, Shiraishi K, Irisawa T, Ohachi T Applied Surface Science, 190(1-4), 517, 2002 |
| 9 |
Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(100) and (n11)A surfaces Kangawa Y, Ito T, Taguchi A, Shiraishi K, Ohachi T Journal of Crystal Growth, 237, 223, 2002 |
| 10 |
Characterization of MBE grown GaAs/AlGaAs heterointerfaces with photoluminescence from quantum wells Harima N, Nelson JT, Ohachi T Journal of Crystal Growth, 237, 274, 2002 |