검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates France RM, Feifel M, Belz J, Beyer A, Volz K, Ohlmann J, Lackner D, Dimroth F Journal of Crystal Growth, 506, 61, 2019 |
| 2 |
Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates Predan F, Ohlmann J, Mrabet S, Dimroth F, Lackner D Journal of Crystal Growth, 496, 36, 2018 |
| 3 |
Investigation on PEM water electrolysis cell design and components for a HyCon solar hydrogen generator Fallisch A, Schellhase L, Fresko J, Zechmeister M, Zedda M, Ohlmann J, Zielke L, Paust N, Smolinka T International Journal of Hydrogen Energy, 42(19), 13544, 2017 |
| 4 |
Hydrogen concentrator demonstrator module with 19.8% solar-to-hydrogen conversion efficiency according to the higher heating value Fallisch A, Schellhase L, Fresko J, Zedda M, Ohlmann J, Steiner M, Bosch A, Zielke L, Thiele S, Dimroth F, Smolinka T International Journal of Hydrogen Energy, 42(43), 26804, 2017 |
| 5 |
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE Sommer N, Buss R, Ohlmann J, Wegele T, Jurecka C, Liebich S, Kunert B, Stolz W, Volz K Journal of Crystal Growth, 370, 191, 2013 |
| 6 |
Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K Journal of Crystal Growth, 315(1), 16, 2011 |
| 7 |
GaP-nucleation on exact Si (001) substrates for III/V device integration Volz K, Beyer A, Witte W, Ohlmann J, Nemeth I, Kunert B, Stolz W Journal of Crystal Growth, 315(1), 37, 2011 |