화학공학소재연구정보센터
검색결과 : 62건
No. Article
1 Structure and Optical Properties of Layered Perovskite (MA)(2)PbI2-xBrx(SCN)(2) (0 <= x < 1.6)
Yamamoto T, Oswald IWH, Savory CN, Ohmi T, Koegel AA, Scanlon DO, Kageyama H, Neilson JR
Inorganic Chemistry, 59(23), 17379, 2020
2 Advanced Direct-Polishing Process Development of Non-Porous Ultralow-k Dielectric Fluorocarbon with Plasma Treatment on Cu Interconnects
Gu X, Nemoto T, Tomita Y, Teramoto A, Kuroda R, Sugawa S, Ohmi T
Journal of the Electrochemical Society, 159(4), H407, 2012
3 Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy
Kobayashi SI, Kim YG, Wen R, Yasuda K, Fukidome H, Suwa T, Kuroda R, Li X, Teramoto A, Ohmi T, Itaya K
Electrochemical and Solid State Letters, 14(9), H351, 2011
4 Dependence of the Decomposition of Trimethylaluminum on Oxygen Concentration
Yamashita S, Watanuki K, Ishii H, Shiba Y, Kitano M, Shirai Y, Sugawa S, Ohmi T
Journal of the Electrochemical Society, 158(2), H93, 2011
5 Dependence of the Decomposition of Trimethylaluminumon Oxygen Concentration (vol 158, pg H93, 2010)
Yamashita S, Watanuki K, Ishii H, Shiba Y, Kitano M, Shirai Y, Sugawa S, Ohmi T
Journal of the Electrochemical Society, 158(5), S14, 2011
6 Tribological Study of Brush Scrubbing in Post-Chemical Mechanical Planarization Cleaning in Non-porous Ultralow-k Dielectric/Cu Interconnects
Gu X, Nemoto T, Teramoto A, Sakuragi M, Sugawa S, Ohmi T
Journal of the Electrochemical Society, 158(11), H1145, 2011
7 Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure
Cheng WT, Teramoto A, Ohmi T
Journal of the Electrochemical Society, 157(3), H389, 2010
8 Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers
Gaubert P, Teramoto A, Ohmi T
Solid-State Electronics, 54(4), 420, 2010
9 Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
Asahara H, Takamizu D, Inokuchi A, Hirayama M, Teramoto A, Saito S, Takahashi M, Ohmi T
Thin Solid Films, 518(11), 2953, 2010
10 Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing
Hasebe R, Teramoto A, Kuroda R, Suwa T, Sugawa S, Ohmi T
Journal of the Electrochemical Society, 156(1), H10, 2009