| 1 |
Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes
Kim TK, Yoon YJ, Oh SK, Lee YL, Cha YJ, Kwak JS
Applied Surface Science, 432, 233, 2018 |
| 2 |
Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport
Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA
Solid-State Electronics, 142, 25, 2018 |
| 3 |
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC
Vivona M, Greco G, Bongiorno C, Lo Nigro R, Scalese S, Roccaforte F
Applied Surface Science, 420, 331, 2017 |
| 4 |
Structural, electronic and magnetic properties of Ti-doped polar and nonpolar GaN surfaces
Mendoza-Estrada V, Gonzalez-Garcia A, Lopez-Perez W, Pinilla C, Gonzalez-Hernandez R
Journal of Crystal Growth, 467, 12, 2017 |
| 5 |
Ohmic contacts to Gallium Nitride materials
Greco G, Iucolano F, Roccaforte F
Applied Surface Science, 383, 324, 2016 |
| 6 |
Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing
Liu BB, Qin FW, Wang DJ
Applied Surface Science, 355, 59, 2015 |
| 7 |
Temperature-dependent contact resistivity of radio frequency superimposed direct current sputtered indium tin oxide ohmic contact to p-type gallium nitride
Cha YJ, Lee GJ, Lee YL, Oh SK, Kwak JS
Thin Solid Films, 591, 182, 2015 |
| 8 |
Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air
Borysiewicz MA, Mysliwiec M, Golaszewska K, Jakiela R, Dynowska E, Kaminska E, Piotrowska A
Solid-State Electronics, 94, 15, 2014 |
| 9 |
Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping
Chambers SA, Gu M, Sushko PV, Yang H, Wang CM, Browning ND
Advanced Materials, 25(29), 4001, 2013 |
| 10 |
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters
Jung S, Song KR, Lee SN, Kim H
Advanced Materials, 25(32), 4470, 2013 |
