| 1 |
Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals
Nakano T, Shinagawa N, Yabu M, Ohtani N
Journal of Crystal Growth, 516, 51, 2019 |
| 2 |
Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography
Shioura K, Shinagawa N, Izawa T, Ohtani N
Journal of Crystal Growth, 515, 58, 2019 |
| 3 |
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Sonoda M, Nakano T, Shioura K, Shinagawa N, Ohtani N
Journal of Crystal Growth, 499, 24, 2018 |
| 4 |
Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
Mannen Y, Shimada K, Taniguchi C, Ohtani N
Journal of Crystal Growth, 498, 328, 2018 |
| 5 |
Formation of basal plane stacking faults on the (000(1)over-bar) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Ohtomo K, Matsumoto N, Ashida K, Kaneko T, Ohtani N, Katsuno M, Sato S, Tsuge H, Fujimoto T
Journal of Crystal Growth, 478, 174, 2017 |
| 6 |
Characterization of dopant density dependence on transmittance and resistance of ZnO films fabricated using spin-coating method
Morita Y, Emoto A, Ohtani N
Molecular Crystals and Liquid Crystals, 641, 106, 2016 |
| 7 |
Fabrication of silica glass thin films containing organic emissive materials and application to multi-layer organic light-emitting diodes
Nakagawa R, Jitsui Y, Emoto A, Ohtani N
Molecular Crystals and Liquid Crystals, 641, 111, 2016 |
| 8 |
Surface morphology and step instability on the (000(1)over-bar)C facet of physical vapor transport-grown 4H-SiC single crystal boules
Yamaguchi T, Ohtomo K, Sato S, Ohtani N, Katsuno M, Fujimoto T, Sato S, Tsuge H, Yano T
Journal of Crystal Growth, 431, 24, 2015 |
| 9 |
Oxytocin-gaze positive loop and the coevolution of human-dog bonds
Nagasawa M, Mitsui S, En S, Ohtani N, Ohta M, Sakuma Y, Onaka T, Mogi K, Kikusui T
Science, 348(6232), 333, 2015 |
| 10 |
Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals
Ohtani N, Ohshige C, Katsuno M, Fujimoto T, Sato S, Tsuge H, Ohashi W, Yano T, Matsuhata H, Kitabatake M
Journal of Crystal Growth, 386, 9, 2014 |
