화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker
Chin TP, Gutierrez-Aitken AL, Cowles J, Kaneshiro EN, Han AC, Block TR, Oki AK, Streit DC
Journal of Vacuum Science & Technology B, 17(3), 1136, 1999
2 Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers
Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC
Journal of Vacuum Science & Technology B, 16(3), 1475, 1998
3 Commercial Heterojunction Bipolar-Transistor Production by Molecular-Beam Epitaxy
Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M
Journal of Vacuum Science & Technology B, 14(3), 2216, 1996
4 Molecular-Beam Epitaxy Growth and Characterization of InGaAlAs-Collector Heterojunction Bipolar-Transistors with 140 GHz - F-Max and 20 V Breakdown
Block TR, Wojtowicz M, Cowles J, Tran L, Oki AK, Streit DC
Journal of Vacuum Science & Technology B, 14(3), 2221, 1996
5 GaAs and InP Selective Molecular-Beam Epitaxy
Streit DC, Block TR, Han AC, Wojtowicz M, Umemoto DK, Kobayashi K, Oki AK, Liu PH, Lai R, Ng GI
Journal of Vacuum Science & Technology B, 13(2), 771, 1995