1 |
Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques Ishikawa Y, Katoh Y, Okigawa M, Samukawa S Journal of Vacuum Science & Technology A, 23(6), 1509, 2005 |
2 |
On-wafer monitoring of plasma-induced electrical current in silicon dioxide to predict plasma radiation damage Okigawa M, Ishikawa Y, Samukawa S Journal of Vacuum Science & Technology B, 23(1), 173, 2005 |
3 |
Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation Ishikawa Y, Okigawa M, Samukawa S, Yamasaki S Journal of Vacuum Science & Technology B, 23(2), 389, 2005 |
4 |
Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge-coupled 44 image-sensor processes (vol 21, pg 2448, 2003) Okigawa M, Ishikawa Y, Samukawa S Journal of Vacuum Science & Technology B, 22(2), 861, 2004 |
5 |
Ultraviolet-induced damage in fluorocarbon plasma and its reduction by pulse-time-modulated plasma in charge coupled device image sensor wafer processesx Okigawa M, Ishikawa Y, Ichihashi Y, Samukawa S Journal of Vacuum Science & Technology B, 22(6), 2818, 2004 |
6 |
Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes Okigawa M, Ishikawa Y, Samukawa S Journal of Vacuum Science & Technology B, 21(6), 2448, 2003 |
7 |
Control of surface reactions in high-performance SiO2 etching Tatsumi T, Matsui M, Okigawa M, Sekine M Journal of Vacuum Science & Technology B, 18(4), 1897, 2000 |
8 |
Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP Nakagawa H, Morishita S, Noda S, Okigawa M, Inoue M, Sekine M, Ito K Journal of Vacuum Science & Technology A, 17(4), 1514, 1999 |
9 |
Volume/surface effects on electron energy and dissociation reactions in large-volume plasma reactors Kinoshita K, Noda S, Morishita S, Itabashi N, Okigawa M, Sekine M, Inoue M Journal of Vacuum Science & Technology A, 17(4), 1520, 1999 |
10 |
Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate Hayashi H, Okigawa M, Morishita S, Sekine M Journal of Vacuum Science & Technology A, 17(5), 2517, 1999 |