화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques
Ishikawa Y, Katoh Y, Okigawa M, Samukawa S
Journal of Vacuum Science & Technology A, 23(6), 1509, 2005
2 On-wafer monitoring of plasma-induced electrical current in silicon dioxide to predict plasma radiation damage
Okigawa M, Ishikawa Y, Samukawa S
Journal of Vacuum Science & Technology B, 23(1), 173, 2005
3 Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation
Ishikawa Y, Okigawa M, Samukawa S, Yamasaki S
Journal of Vacuum Science & Technology B, 23(2), 389, 2005
4 Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge-coupled 44 image-sensor processes (vol 21, pg 2448, 2003)
Okigawa M, Ishikawa Y, Samukawa S
Journal of Vacuum Science & Technology B, 22(2), 861, 2004
5 Ultraviolet-induced damage in fluorocarbon plasma and its reduction by pulse-time-modulated plasma in charge coupled device image sensor wafer processesx
Okigawa M, Ishikawa Y, Ichihashi Y, Samukawa S
Journal of Vacuum Science & Technology B, 22(6), 2818, 2004
6 Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes
Okigawa M, Ishikawa Y, Samukawa S
Journal of Vacuum Science & Technology B, 21(6), 2448, 2003
7 Control of surface reactions in high-performance SiO2 etching
Tatsumi T, Matsui M, Okigawa M, Sekine M
Journal of Vacuum Science & Technology B, 18(4), 1897, 2000
8 Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP
Nakagawa H, Morishita S, Noda S, Okigawa M, Inoue M, Sekine M, Ito K
Journal of Vacuum Science & Technology A, 17(4), 1514, 1999
9 Volume/surface effects on electron energy and dissociation reactions in large-volume plasma reactors
Kinoshita K, Noda S, Morishita S, Itabashi N, Okigawa M, Sekine M, Inoue M
Journal of Vacuum Science & Technology A, 17(4), 1520, 1999
10 Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate
Hayashi H, Okigawa M, Morishita S, Sekine M
Journal of Vacuum Science & Technology A, 17(5), 2517, 1999