검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XLL, Okojie RS, Hwang J, Schaff WJ Applied Surface Science, 244(1-4), 257, 2005 |
| 2 |
Electronic defect states at annealed metal/4H-SiC interfaces Tumakha S, Goss SH, Brillson LJ, Okojie RS Journal of Vacuum Science & Technology B, 23(2), 594, 2005 |
| 3 |
Characterization of SiC epitaxial structures using high-resolution X-ray diffraction techniques Huang XR, Dudley M, Cho W, Okojie RS, Neudeck PG Materials Science Forum, 457-460, 157, 2004 |
| 4 |
Inelastic stress relaxation in single crystal SiC substrates Okojie RS Materials Science Forum, 457-460, 375, 2004 |
| 5 |
Residual stresses and stacking faults in n-type 4H-SiC epilayers Okojie RS, Zhang M, Pirouz P Materials Science Forum, 457-460, 529, 2004 |
| 6 |
SiC studied via LEEN and cathodoluminescence spectroscopy Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P Materials Science Forum, 457-460, 543, 2004 |
| 7 |
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P Journal of Vacuum Science & Technology B, 20(2), 554, 2002 |
| 8 |
4H-to 3C-SiC polytypic transformation during oxidation Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ Materials Science Forum, 389-3, 451, 2002 |
| 9 |
Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation Okojie RS, Lukco D, Keys L, Tumakha S, Brillson LJ Materials Science Forum, 389-3, 1101, 2002 |