화학공학소재연구정보센터
검색결과 : 22건
No. Article
1 alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Roberts JW, Jarman JC, Johnstone DN, Midgley PA, Chalker PR, Oliver RA, Massabuau FCP
Journal of Crystal Growth, 487, 23, 2018
2 Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT
Journal of Crystal Growth, 456, 151, 2016
3 The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Massabuau FCP, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA
Journal of Crystal Growth, 386, 88, 2014
4 Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE
Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P, Oliver RA
Journal of Crystal Growth, 408, 32, 2014
5 Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ, Oliver RA
Journal of Crystal Growth, 383, 12, 2013
6 Growth and optical characterisation of multilayers of InGaN quantum dots
Zhu TT, El-Ella HAR, Reid B, Holmes MJ, Taylor RA, Kappers MJ, Oliver RA
Journal of Crystal Growth, 338(1), 262, 2012
7 The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 314(1), 13, 2011
8 InGaN super-lattice growth for fabrication of quantum dot containing microdisks
El-Ella HAR, Rol F, Collins DP, Kappers MJ, Taylor RA, Hu EL, Oliver RA
Journal of Crystal Growth, 321(1), 113, 2011
9 The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 331(1), 4, 2011
10 The effect of annealing on the surface morphology of strained and unstrained InxAl1-xN thin films
Brice HR, Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 312(11), 1800, 2010