검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors Onose H, Kobayashi Y, Onuki J Solid-State Electronics, 129, 200, 2017 |
| 2 |
Masking process for high-energy and high-temperature ion implantation Ohyanagi T, Onose H, Watanabe A, Someya T, Ohno T, Amemiya K, Kobayashi Y Materials Science Forum, 389-3, 867, 2002 |
| 3 |
2 kV 4H-SiC junction FETs Onose H, Watanabe A, Someya T, Kobayashi Y Materials Science Forum, 389-3, 1227, 2002 |