검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs Shi ZH, Onsongo D, Banerjee SK Applied Surface Science, 224(1-4), 248, 2004 |
| 2 |
Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1-yCy alloy layers Quinones E, Onsongo D, Shi Z, Banerjee SK Solid-State Electronics, 48(3), 379, 2004 |
| 3 |
Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGexPMOSFETs Shi ZH, Onsongo D, Rai R, Samavedam SB, Banerjee SK Solid-State Electronics, 48(12), 2299, 2004 |
| 4 |
Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Shi ZH, Chen XD, Onsongo D, Quinones EJ, Banerjee SK Solid-State Electronics, 44(7), 1223, 2000 |