검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Novel dielectrics for gate oxides and surface passivation on GaN Gila BP, Thaler GT, Onstine AH, Hlad M, Gerger A, Herrero A, Allums KK, Stodilka D, Jang S, Kang B, Anderson T, Abernathy CR, Ren F, Pearton SJ Solid-State Electronics, 50(6), 1016, 2006 |
| 2 |
Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO Ip K, Gila BP, Onstine AH, Lambers ES, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F Applied Surface Science, 236(1-4), 387, 2004 |
| 3 |
Effects of Sc2O3 surface passivation on deep level spectra of AlGaN/GaN high electron mobility transistors Polyakov AY, Smirnov NB, Govorkov AV, Danilin VN, Zhukova TA, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ Journal of the Electrochemical Society, 151(8), G497, 2004 |
| 4 |
Small signal measurement of SC2O3AlGaN/GaN moshemts Luo B, Mehandru R, Kang BS, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie JK, Jenkins T, Sewell J, Via D, Crespo A Solid-State Electronics, 48(2), 355, 2004 |
| 5 |
Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R Electrochemical and Solid State Letters, 6(3), G31, 2003 |
| 6 |
Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma Gila BP, Onstine AH, Kim J, Allums KK, Ren F, Abernathy CR, Pearton SJ Journal of Vacuum Science & Technology B, 21(6), 2368, 2003 |
| 7 |
Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ Solid-State Electronics, 47(6), 1015, 2003 |
| 8 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 9 |
Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F Electrochemical and Solid State Letters, 5(7), G51, 2002 |
| 10 |
High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes Kim JY, Gila BP, Mehandru R, Luo B, Onstine AH, Abernathy CR, Ren F, Allums KK, Dwivedi R, Forgarty TN, Wilkins R, Irokawa Y, Pearton SJ Electrochemical and Solid State Letters, 5(7), G57, 2002 |