검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Semi-insulating, Fe-Doped buffer layers grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Dabiran AM, Wowchak AM, Osinsky AV, Chow PP, Pearton SJ, Shcherbatchev KD, Bublik VT Journal of the Electrochemical Society, 154(9), H749, 2007 |
| 2 |
Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices Polyakov AY, Smirnov NB, Govorkov AV, Shcherbatchev KD, Bublik VT, Voronova MI, Dabiran AM, Osinsky AV, Pearton SJ Journal of Vacuum Science & Technology B, 25(1), 69, 2007 |
| 3 |
Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Belogorokhov AI, Govorkov AV, Kozhukhova EA, Osinsky AV, Xie JQ, Hertog B, Pearton SJ Journal of Vacuum Science & Technology B, 25(6), 1794, 2007 |
| 4 |
Neutron irradiation effects in p-GaN Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Pearton SJ, Dabiran A, Osinsky AV Journal of Vacuum Science & Technology B, 24(5), 2256, 2006 |
| 5 |
New type of defects related to nonuniform distribution of compensating centers in p-GaN films Polyakov AY, Govorkov AV, Smirnov NB, Shmidt NM, Pearton SJ, Osinsky AV Solid-State Electronics, 47(1), 51, 2003 |
| 6 |
Deep levels studies of AlGaN/GaN superlattices Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Pearton SJ, Usikov AS, Schmidt NM, Osinsky AV, Lundin WV, Zavarin EE, Besulkin AI Solid-State Electronics, 47(4), 671, 2003 |
| 7 |
Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface Shmidt NM, Kolmakov AG, Loskutov AV, Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ, Osinsky AV Solid-State Electronics, 47(6), 1003, 2003 |
| 8 |
Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD Journal of Vacuum Science & Technology A, 20(3), 721, 2002 |
| 9 |
Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions Luo B, Kim J, Mehandru R, Ren F, Lee KP, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Osinsky AV, Norris PE Solid-State Electronics, 46(9), 1345, 2002 |