검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Synthesis and Characterization of Double Solid Solution (Zr,Ti)(2)(Al,Sn)C MAX Phase Ceramics Tunca B, Lapauw T, Delville R, Neuville DR, Hennet L, Thiaudiere D, Ouisse T, Hadermann J, Vleugels J, Lambrinou K Inorganic Chemistry, 58(10), 6669, 2019 |
| 2 |
High temperature solution growth and characterization of Cr2AlC single crystals Ouisse T, Sarigiannidou E, Chaix-Pluchery O, Roussel H, Doisneau B, Chaussende D Journal of Crystal Growth, 384, 88, 2013 |
| 3 |
Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals Seiss M, Ouisse T, Chaussende D Journal of Crystal Growth, 384, 129, 2013 |
| 4 |
Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration Liu FY, Diab A, Ionica I, Akarvardar K, Hobbs C, Ouisse T, Mescot X, Cristoloveanu S Solid-State Electronics, 90, 65, 2013 |
| 5 |
Conjugated polymer/molten salt blend optimization Habrard F, Ouisse T, Stephan O Journal of Physical Chemistry B, 110(31), 15049, 2006 |
| 6 |
Photon emission analysis of defect-free 4H-SiC pn diodes in avalanche regime Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K Materials Science Forum, 389-3, 1293, 2002 |
| 7 |
Hot-carrier luminescence in 4H-SiC MESFETs Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C Materials Science Forum, 389-3, 1371, 2002 |
| 8 |
Noise behavior of 4H-SiC MESFETs at low drain voltage Banc C, Royet AS, Ouisse T, Bano E, Noblanc O, Brylinski C Materials Science Forum, 353-356, 703, 2001 |
| 9 |
Photon emission mechanisms in 6H and 4H-SiC MOSFETs Banc C, Bano E, Ouisse T, Scharnholz S, Schmid U, Wondrak W, Niemann E Materials Science Forum, 338-3, 695, 2000 |
| 10 |
Electrical and physical behavior of SiC layers on insulator (SiCOI) Hugonnard-Bruyere E, Letertre F, Di Cioccio L, von Bardeleben HJ, Cantin JL, Ouisse T, Billon T, Guillot G Materials Science Forum, 338-3, 715, 2000 |