검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Ab initio calculation of shallow defects: Results for P-related donors in SiC Gerstmann U, Rauls E, Overhof H, Frauenheim T Materials Science Forum, 483, 501, 2005 |
| 2 |
The nature of the shallow boron acceptor in SiC - localization versus effective mass theory Gerstmann U, Gali A, Deak P, Frauenheim T, Overhof H Materials Science Forum, 457-460, 711, 2004 |
| 3 |
Nitrogen-vacancy complexes in SiC - Final annealing products of the silicon vacancy? Gerstmann U, Rauls E, Frauenheim T, Overhof H Materials Science Forum, 433-4, 481, 2002 |