| 1 |
Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process
Kim TY, Kang TS, Hong JP
Current Applied Physics, 15(8), 910, 2015 |
| 2 |
Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-biased MgZnO thin film transistors
Tsai YS, Li CH, Chiu IC, Chin HA, Cheng IC, Chen JZ
Thin Solid Films, 529, 360, 2013 |
| 3 |
Effects of co-sputtering powers on the properties of silicon-incorporated zinc oxide used as a channel layer of thin film transistors
Lee SH, Kim W, Park JS
Thin Solid Films, 549, 46, 2013 |
| 4 |
Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2-Al2O3 gate dielectrics
Son H, Kim J, Yang J, Cho D, Yi M
Current Applied Physics, 11(4), S135, 2011 |
| 5 |
Solution processed IZTO thin film transistor on silicon nitride dielectric layer
Kim BJ, Kim HJ, Yoon TS, Kim YS, Lee DH, Choi Y, Ryu BH, Lee HH
Journal of Industrial and Engineering Chemistry, 17(1), 96, 2011 |
| 6 |
Oxygen Atom Neutral Beam Assisted Deposited Al2O3 and its Application to the Fabrication of Zinc Oxide Thin Film Transistor
Cho ES, Cho J, Kwon SJ
Molecular Crystals and Liquid Crystals, 550, 119, 2011 |
| 7 |
Role of O(2)/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process
Kim W, Lee SH, Bang JH, Uhm HS, Park JS
Thin Solid Films, 520(5), 1475, 2011 |
| 8 |
Fabrication of Atomic Layer Deposited Zinc Oxide Thin Film Transistors with Organic Gate Insulator on Flexible Substrate
Choi KM, Hyung GW, Yang JW, Koo JR, Kim YK, Kwon SJ, Cho ES
Molecular Crystals and Liquid Crystals, 529, 131, 2010 |
