| 1 |
Large scale compatible fabrication of gold capped titanium dioxide nanoantennas using a shadowing effect for photoelectrochemical water splitting
Ghobadi TGU, Ghobadi A, Karadas F, Ozbay E
International Journal of Hydrogen Energy, 45(3), 1521, 2020 |
| 2 |
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
Kurt G, Gulseren ME, Ghobadi TGU, Ural S, Kayal OA, Ozturk M, Butun B, Kabak M, Ozbay E
Solid-State Electronics, 158, 22, 2019 |
| 3 |
Effect of substitutional As impurity on electrical and optical properties of beta-Si3N4 structure
Kutlu E, Narin P, Atmaca G, Sarikavak-Lisesivdin B, Lisesivdin SB, Ozbay E
Materials Research Bulletin, 83, 128, 2016 |
| 4 |
Co doping induced structural and optical properties of sol-gel prepared ZnO thin films
Gungor E, Gungor T, Caliskan D, Ceylan A, Ozbay E
Applied Surface Science, 318, 309, 2014 |
| 5 |
XPS for probing the dynamics of surface voltage and photovoltage in GaN
Sezen H, Ozbay E, Suzer S
Applied Surface Science, 323, 25, 2014 |
| 6 |
The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tulek R, Arslan E, Bayrakli A, Turhan S, Gokden S, Duygulu O, Kaya AA, Firat T, Teke A, Ozbay E
Thin Solid Films, 551, 146, 2014 |
| 7 |
The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)
Sarikavak-Lisesivdin B, Lisesivdin SB, Ozbay E
Current Applied Physics, 13(1), 224, 2013 |
| 8 |
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Arslan E, Turhan S, Gokden S, Teke A, Ozbay E
Thin Solid Films, 548, 411, 2013 |
| 9 |
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
Kelekci O, Tasli P, Cetin SS, Kasap M, Ozcelik S, Ozbay E
Current Applied Physics, 12(6), 1600, 2012 |
| 10 |
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC
Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E
Journal of Crystal Growth, 315(1), 168, 2011 |
