검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY Journal of Crystal Growth, 220(4), 461, 2000 |
| No. | Article |
|---|---|
| 1 |
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY Journal of Crystal Growth, 220(4), 461, 2000 |