화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
Sultan MT, Gudmundsson JT, Manolescu A, Stoica T, Ciurea ML, Svavarsson HG
Applied Surface Science, 479, 403, 2019
2 Propellant grade ultrafine aluminum powder by RF induction plasma
Karthik PS, Chandrasekhar SB, Chakravarty D, Srinivas PVV, Chakravadhanula VSK, Rao TN
Advanced Powder Technology, 29(3), 804, 2018
3 Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
Jung WS, Lim D, Han H, Sokolov AS, Jeon YR, Choi C
Solid-State Electronics, 149, 52, 2018
4 Performance improvement of poly-Si tunnel thin-film transistor by NH3 plasma treatment
Ma WCY, Chen YH, Lin ZY, Huang YS, Huang BS, Wu ZD
Thin Solid Films, 618, 178, 2016
5 Distinction between interfacial layer effect and trap passivation effect of N-2 plasma treatment on LTPS-TFTs
Ma WCY
Solid-State Electronics, 100, 45, 2014
6 Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application
Akahori K, Wang G, Okumura K, Soga T, Jimbo T, Umeno M
Solar Energy Materials and Solar Cells, 66(1-4), 593, 2001
7 A detailed study of H-2 plasma passivation effects on GaAs/Si solar cell
Wang G, Ogawa T, Soga T, Jimbo T, Umeno M
Solar Energy Materials and Solar Cells, 66(1-4), 599, 2001
8 Reactive Ion Etch-Induced Effects on 0.2-Mu-M T-Gate In0.52Al0.48As/In0.53Ga0.47As/InP High-Electron-Mobility Transistors
Cheung R, Patrick W, Pfund I, Hahner G
Journal of Vacuum Science & Technology B, 14(6), 3679, 1996
9 X-Ray-Absorption Near-Edge Structures of Sulfur on Gas-Phase Polysulfide Treated InP Surfaces and at Sinx/InP Interfaces
Kwok RW, Huang LJ, Lau WM, Kasrai M, Feng X, Tan K, Ingrey S, Landheer D
Journal of Vacuum Science & Technology A, 12(5), 2701, 1994