| 1 |
Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks
Oh J
Current Applied Physics, 14, S69, 2014 |
| 2 |
Unexpected impact of germanium content in SiGe bulk PMOSFETs
Diouf C, Cros A, Soussou A, Rideau D, Haendler S, Rosa J, Ghibaudo G
Solid-State Electronics, 86, 45, 2013 |
| 3 |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C-V characteristics, mobility, and ON current
Pham AT, Zhao QT, Jungemann C, Meinerzhagen B, Mantl S, Soree B, Pourtois G
Solid-State Electronics, 65-66, 64, 2011 |
| 4 |
The switch of the worst case on NBTI and hot-carrier reliability for 0.13 mu m pMOSFETs
Tu CH, Chen SY, Lin MH, Wang MC, Wu SH, Chou S, Ko J, Huang HS
Applied Surface Science, 254(19), 6186, 2008 |
| 5 |
Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs
Shi ZH, Onsongo D, Banerjee SK
Applied Surface Science, 224(1-4), 248, 2004 |
| 6 |
Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs
Sheu CJ, Jang SL
Solid-State Electronics, 47(4), 705, 2003 |
| 7 |
SiGe - heterostructures for CMOS technology
Whall TE, Parker EHC
Thin Solid Films, 367(1-2), 250, 2000 |
| 8 |
Noise as a diagnostic tool for semiconductor material and device characterization
Claeys C, Simoen E
Journal of the Electrochemical Society, 145(6), 2058, 1998 |
